Electronic Raman scattering in Tl2Ba2CuO6+δ: Oxygen doping-effects

L.V. Gasparov, P. Lemmens, N.N. Kolesnikov, G. Güntherodt

Research output: Contribution to journalArticlepeer-review

Abstract

We present electronic Raman scattering measurements of moderately overdoped Tl2Ba2CuO6+δ (Tc=56 K) and compare it with measurements on optimally and strongly overdoped samples. By taking the pair-breaking peak in the B1g scattering component as 2Δ0, we found that the 2Δ0/kBTc ratio decreases from 8 to 3 with increasing doping. The intensity of the A1g scattering component decreases by an order of magnitude in going to the overdoped samples. The behavior of the low-frequency scattering of the B1g and B2g symmetry components for T<Tc is “robust” for all three dopings. It can be described by the ω3- and ω-law, respectively, which is consistent with d-wave symmetry of the superconducting order parameter.
Original languageAmerican English
JournalPhysica B-condensed Matter
Volume244
DOIs
StatePublished - Jan 1 1998
Externally publishedYes

Disciplines

  • Atomic, Molecular and Optical Physics
  • Physics
  • Quantum Physics
  • Condensed Matter Physics

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