High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris, Y. Nishi

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number093509
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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