High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

N. Goel; P. Majhi; W. Tsai; M. Warusawithana; D. G. Schlom; M. B. Santos; J. S. Harris; Y. Nishi

doi:10.1063/1.2776846

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris, Y. Nishi

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	093509
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2776846
State	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2776846

Cite this

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title = "High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric",

author = "N. Goel and P. Majhi and W. Tsai and M. Warusawithana and Schlom, \{D. G.\} and Santos, \{M. B.\} and Harris, \{J. S.\} and Y. Nishi",

year = "2007",

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language = "English",

volume = "91",

journal = "Applied Physics Letters",

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T1 - High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

AU - Goel, N.

AU - Majhi, P.

AU - Tsai, W.

AU - Warusawithana, M.

AU - Schlom, D. G.

AU - Santos, M. B.

AU - Harris, J. S.

AU - Nishi, Y.

PY - 2007

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DO - 10.1063/1.2776846

M3 - Article

AN - SCOPUS:34548412615

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093509

ER -

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

ASJC Scopus Subject Areas

Access to Document

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