Abstract
We present temperature-dependent reflectance measurements of layered transition metal dichalcogenide 1T-TaS2 in the frequency range from 100 to 40,000 cm-1 (0.012--5 eV). 1T-TaS2 undergoes two metal-insulator transitions at T=350 K, and 180K. Both transitions lead to decrease of low frequency optical conductivity with second transition demonstrating hysteresis both in dc- and optical conductivity. We discuss how the metal-insulator transitions affect free carriers, direct optical transitions and phonon spectrum of the 1T-TaS_2.
Original language | American English |
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State | Published - Mar 2002 |
Event | American Physical Society Meeting, 2002 - Indianapolis, United States Duration: Mar 18 2002 → Mar 22 2002 |
Conference
Conference | American Physical Society Meeting, 2002 |
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Country/Territory | United States |
City | Indianapolis |
Period | 3/18/02 → 3/22/02 |
Disciplines
- Ceramic Materials