Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova; O. Celik; T. Gustafsson; E. Garfunkel; M. Warusawithana; D. G. Schlom; H. Wen; M. B. Santos; Safak Sayan; Wilman Tsai; Niti Goel

doi:10.1149/1.2779553

Interface characterization in III-V CMOS nanoelectronics

L. V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D. G. Schlom, H. Wen, M. B. Santos, Safak Sayan, Wilman Tsai, Niti Goel

Research output: Chapter or Contribution to Book › Literary contribution

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	117-122
Number of pages	6
Edition	4
ISBN (Electronic)	9781566775700
DOIs	https://doi.org/10.1149/1.2779553
State	Published - 2007
Externally published	Yes
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: Oct 8 2007 → Oct 10 2007

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/8/07 → 10/10/07

ASJC Scopus Subject Areas

General Engineering

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10.1149/1.2779553

Cite this

Goncharova, L. V., Celik, O., Gustafsson, T., Garfunkel, E., Warusawithana, M., Schlom, D. G., Wen, H., Santos, M. B., Sayan, S., Tsai, W., & Goel, N. (2007). Interface characterization in III-V CMOS nanoelectronics. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 117-122). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779553

Goncharova, LV, Celik, O, Gustafsson, T, Garfunkel, E, Warusawithana, M, Schlom, DG, Wen, H, Santos, MB, Sayan, S, Tsai, W & Goel, N 2007, Interface characterization in III-V CMOS nanoelectronics. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 117-122, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 10/8/07. https://doi.org/10.1149/1.2779553

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title = "Interface characterization in III-V CMOS nanoelectronics",

author = "Goncharova, {L. V.} and O. Celik and T. Gustafsson and E. Garfunkel and M. Warusawithana and Schlom, {D. G.} and H. Wen and Santos, {M. B.} and Safak Sayan and Wilman Tsai and Niti Goel",

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AU - Goncharova, L. V.

AU - Celik, O.

AU - Gustafsson, T.

AU - Garfunkel, E.

AU - Warusawithana, M.

AU - Schlom, D. G.

AU - Wen, H.

AU - Santos, M. B.

AU - Sayan, Safak

AU - Tsai, Wilman

AU - Goel, Niti

PY - 2007

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U2 - 10.1149/1.2779553

DO - 10.1149/1.2779553

M3 - Literary contribution

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T3 - ECS Transactions

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BT - ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks

T2 - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

Y2 - 8 October 2007 through 10 October 2007

ER -

Interface characterization in III-V CMOS nanoelectronics

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

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