Magnetization and spin-flip Raman scattering in Cd1−xCrxSe and Cd1−xVxSe

X. Lu, I. Miotkowski, S. Rodriguez, A. K. Ramdas, H. Alawadhi, T. M. Pekarek

Research output: Contribution to journalArticlepeer-review

Abstract

Spin-flip Raman scattering (SFRS) from donor-bound electrons in II-VI diluted magnetic semiconductors (DMSs) containing 3𝑑 transition-metal ions, e.g., Cd1−𝑥Cr𝑥Se and Cd1−𝑥V𝑥Se, allows one to explore the exchange interaction between the conduction band or donor electrons with the 3𝑑 magnetic ions, which is the so-called 𝑠-𝑑 exchange interaction. The 𝑠-𝑑 exchange energy, being the SFRS Raman shift after subtracting the intrinsic Zeeman splitting characterized by 𝑔*=0.52 for CdSe, together with the magnetization measurements of those DMSs, allow one to deduce the 𝑠-𝑑 exchange constant 𝑁0⁢𝛼. For Cd1−𝑥Cr𝑥Se and Cd1−𝑥V𝑥Se, the 𝑁0⁢𝛼 values are 210±13 and 269±10 meV, respectively.
Original languageEnglish
Article number115213
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number11
DOIs
StatePublished - Sep 28 2012
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Disciplines

  • Physics

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