Measurement of the dc resistance of semiconductor thin film–gas systems: Comparison to several transport models

Barbara Carrico, J. Saredy, J. L. Tracy, N. G. Patel, J. Garner, L. Gasparov

Research output: Contribution to journalArticlepeer-review

Abstract

Measurements have been made of the dc resistance of a thin film semiconductor, an indium tin oxide that has been exposed to various gases (acetylene, methane, and sulfur dioxide). The resistance versus time is found to be a characteristic that serves as a possible means for detecting and identifying a gas. Three simple dc transport models are used to determine the time-dependent resistance: resistor network, dynamic Maxwell-Garnett Theory (DMGT), and a dynamic effective medium approximation (DEMA) model. The resistor network model gives only the general trend of the experimental data. The DEMA and DMGT predictions are nearly identical and independent of dimensionality. This promising application of the historic EMA and MGT models yields results that are in good agreement with experimental resistance data presented in this paper. Future directions might include an extension of these dc resistance results to the finite frequency ac and optical conductivity.
Original languageAmerican English
Article number083714
JournalJournal of Applied Physics
Volume102
Issue number8
DOIs
StatePublished - Oct 15 2007

Keywords

  • Electrical conductivity
  • Effective medium approximation
  • Electrical properties and parameters
  • election reform
  • Scanning electron microscopy
  • Thin films
  • Nano-optics
  • Composite models
  • Organic compounds
  • Mean field theory

Disciplines

  • Physics

Cite this