Single crystal growth and characterization of NiSe2

P. Wang; P. Somasundaram; J.M. Honig; T.M. Pekarek

doi:10.1016/S0025-5408(97)00125-6

Single crystal growth and characterization of NiSe2

P. Wang, P. Somasundaram, J.M. Honig, T.M. Pekarek

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Abstract

A method is described for growth of single crystals of NiSe2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.

Original language	American English
Pages (from-to)	1435-1440
Journal	Materials Research Bulletin
Volume	32
Issue number	10
DOIs	https://doi.org/10.1016/S0025-5408(97)00125-6
State	Published - Jan 10 1997

Disciplines

Physics
Other Earth Sciences
Quantum Physics
Mineral Physics

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title = "Single crystal growth and characterization of NiSe2",

abstract = "A method is described for growth of single crystals of NiSe2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.",

author = "P. Wang and P. Somasundaram and J.M. Honig and T.M. Pekarek",

note = "A method is described for growth of single crystals of NiSe 2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace.",

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doi = "10.1016/S0025-5408(97)00125-6",

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T1 - Single crystal growth and characterization of NiSe2

AU - Wang, P.

AU - Somasundaram, P.

AU - Honig, J.M.

AU - Pekarek, T.M.

N1 - A method is described for growth of single crystals of NiSe 2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace.

PY - 1997/1/10

Y1 - 1997/1/10

N2 - A method is described for growth of single crystals of NiSe2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.

AB - A method is described for growth of single crystals of NiSe2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.

UR - https://www.sciencedirect.com/science/article/pii/S0025540897001256

U2 - 10.1016/S0025-5408(97)00125-6

DO - 10.1016/S0025-5408(97)00125-6

M3 - Article

SN - 0025-5408

VL - 32

SP - 1435

EP - 1440

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Single crystal growth and characterization of NiSe2

Abstract

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