The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

D. T. McInturff; E. S. Harmon; J. C. P. Chang; T. M. Pekarek; J. M. Woodall

doi:10.1063/1.117466

The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

D. T. McInturff, E. S. Harmon, J. C. P. Chang, T. M. Pekarek, J. M. Woodall

Purdue University

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the growth and characterization of GaAs films in which a high concentration (1 at. %) of elemental iron is introduced during growth in a conventional molecular beam epitaxy system. For films grown at 600 °C, the iron incorporates as Fe3GaAs precipitates. Unlike the formation of As precipitates in low temperature grown (LTG) GaAs, iron precipitate formation does not require a postgrowth anneal. Hall measurements of the as‐grown GaAs/Fe3GaAs composite intentionally doped with silicon indicate that Fe3GaAs precipitates will deplete carriers in the same manner as As precipitates deplete carriers in annealed LTG GaAs. The degree of depletion depends on the initial growth temperature and the intentional doping level. Electrical behavior of samples subjected to a postgrowth rapid thermal anneal indicate that the material is deep level compensated by iron acceptor doping via dissolution of the Fe3GaAs precipitates.

Original language	American English
Journal	Applied Physics Letters
Volume	69
DOIs	https://doi.org/10.1063/1.117466
State	Published - Sep 23 1996
Externally published	Yes

Disciplines

Physics
Quantum Physics
Mineral Physics

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title = "The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy",

abstract = "We describe the growth and characterization of GaAs films in which a high concentration (1 at. %) of elemental iron is introduced during growth in a conventional molecular beam epitaxy system. For films grown at 600 °C, the iron incorporates as Fe3GaAs precipitates. Unlike the formation of As precipitates in low temperature grown (LTG) GaAs, iron precipitate formation does not require a postgrowth anneal. Hall measurements of the as‐grown GaAs/Fe3GaAs composite intentionally doped with silicon indicate that Fe3GaAs precipitates will deplete carriers in the same manner as As precipitates deplete carriers in annealed LTG GaAs. The degree of depletion depends on the initial growth temperature and the intentional doping level. Electrical behavior of samples subjected to a postgrowth rapid thermal anneal indicate that the material is deep level compensated by iron acceptor doping via dissolution of the Fe3GaAs precipitates.",

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T1 - The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

AU - McInturff, D. T.

AU - Harmon, E. S.

AU - Chang, J. C. P.

AU - Pekarek, T. M.

AU - Woodall, J. M.

PY - 1996/9/23

Y1 - 1996/9/23

N2 - We describe the growth and characterization of GaAs films in which a high concentration (1 at. %) of elemental iron is introduced during growth in a conventional molecular beam epitaxy system. For films grown at 600 °C, the iron incorporates as Fe3GaAs precipitates. Unlike the formation of As precipitates in low temperature grown (LTG) GaAs, iron precipitate formation does not require a postgrowth anneal. Hall measurements of the as‐grown GaAs/Fe3GaAs composite intentionally doped with silicon indicate that Fe3GaAs precipitates will deplete carriers in the same manner as As precipitates deplete carriers in annealed LTG GaAs. The degree of depletion depends on the initial growth temperature and the intentional doping level. Electrical behavior of samples subjected to a postgrowth rapid thermal anneal indicate that the material is deep level compensated by iron acceptor doping via dissolution of the Fe3GaAs precipitates.

AB - We describe the growth and characterization of GaAs films in which a high concentration (1 at. %) of elemental iron is introduced during growth in a conventional molecular beam epitaxy system. For films grown at 600 °C, the iron incorporates as Fe3GaAs precipitates. Unlike the formation of As precipitates in low temperature grown (LTG) GaAs, iron precipitate formation does not require a postgrowth anneal. Hall measurements of the as‐grown GaAs/Fe3GaAs composite intentionally doped with silicon indicate that Fe3GaAs precipitates will deplete carriers in the same manner as As precipitates deplete carriers in annealed LTG GaAs. The degree of depletion depends on the initial growth temperature and the intentional doping level. Electrical behavior of samples subjected to a postgrowth rapid thermal anneal indicate that the material is deep level compensated by iron acceptor doping via dissolution of the Fe3GaAs precipitates.

UR - http://aip.scitation.org/doi/10.1063/1.117466

U2 - 10.1063/1.117466

DO - 10.1063/1.117466

M3 - Article

SN - 0003-6951

VL - 69

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

Abstract

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