The electrical characterization of molecular-beam-deposited LaA10 3 on gaas and its annealing effects

Donghun Choi; Maitri Warusawithana; Chi On Chui; Joseph Chen; Wilman Tsai; Darrell G. Schlom; James S. Harris

The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects

Donghun Choi, Maitri Warusawithana, Chi On Chui, Joseph Chen, Wilman Tsai, Darrell G. Schlom, James S. Harris

Research output: Chapter or Contribution to Book › Literary contribution

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages	127-132
Number of pages	6
State	Published - 2007
Externally published	Yes
Event	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2007 → Apr 13 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	996
ISSN (Print)	0272-9172

Conference

Conference	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/9/07 → 4/13/07

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Choi, D., Warusawithana, M., Chui, C. O., Chen, J., Tsai, W., Schlom, D. G., & Harris, J. S. (2007). The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. In Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies (pp. 127-132). (Materials Research Society Symposium Proceedings; Vol. 996).

The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. / Choi, Donghun; Warusawithana, Maitri; Chui, Chi On et al.
Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 127-132 (Materials Research Society Symposium Proceedings; Vol. 996).

Research output: Chapter or Contribution to Book › Literary contribution

Choi, D, Warusawithana, M, Chui, CO, Chen, J, Tsai, W, Schlom, DG & Harris, JS 2007, The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. in Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 127-132, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.

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