Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide

S. Koveshnikov; C. Adamo; V. Tokranov; M. Yakimov; R. Kambhampati; M. Warusawithana; D. G. Schlom; W. Tsai; S. Oktyabrsky

doi:10.1063/1.2952830

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide

S. Koveshnikov, C. Adamo, V. Tokranov, M. Yakimov, R. Kambhampati, M. Warusawithana, D. G. Schlom, W. Tsai, S. Oktyabrsky

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	012903
Journal	Applied Physics Letters
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.2952830
State	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2952830

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title = "Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide",

author = "S. Koveshnikov and C. Adamo and V. Tokranov and M. Yakimov and R. Kambhampati and M. Warusawithana and Schlom, \{D. G.\} and W. Tsai and S. Oktyabrsky",

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journal = "Applied Physics Letters",

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T1 - Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide

AU - Koveshnikov, S.

AU - Adamo, C.

AU - Tokranov, V.

AU - Yakimov, M.

AU - Kambhampati, R.

AU - Warusawithana, M.

AU - Schlom, D. G.

AU - Tsai, W.

AU - Oktyabrsky, S.

PY - 2008

Y1 - 2008

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U2 - 10.1063/1.2952830

DO - 10.1063/1.2952830

M3 - Article

AN - SCOPUS:47249135991

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012903

ER -

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide

ASJC Scopus Subject Areas

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