High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

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@article{0cb3042a661545b0b11dca91ff4ec710,

title = "High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric",

author = "N. Goel and P. Majhi and W. Tsai and M. Warusawithana and Schlom, \{D. G.\} and Santos, \{M. B.\} and Harris, \{J. S.\} and Y. Nishi",

year = "2007",

doi = "10.1063/1.2776846",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "9",

}

TY - JOUR

T1 - High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAl O3 gate dielectric

AU - Goel, N.

AU - Majhi, P.

AU - Tsai, W.

AU - Warusawithana, M.

AU - Schlom, D. G.

AU - Santos, M. B.

AU - Harris, J. S.

AU - Nishi, Y.

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/34548412615

UR - https://www.scopus.com/pages/publications/34548412615#tab=citedBy

U2 - 10.1063/1.2776846

DO - 10.1063/1.2776846

M3 - Article

AN - SCOPUS:34548412615

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093509

ER -