Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS2 Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

P. J. Keeney; P. M. Coelho; J. T. Haraldsen

doi:10.3390/cryst15030243

Intrinsic Defect-Induced Local Semiconducting-to-Metallic Regions Within Monolayer 1T-TiS₂ Displayed by First-Principles Calculations and Scanning Tunneling Microscopy

P. J. Keeney, P. M. Coelho, J. T. Haraldsen

Physics

University of North Florida

Producción científica: Article › revisión exhaustiva

Idioma original	English
Número de artículo	243
Publicación	Crystals
Volumen	15
N.º	3
DOI	https://doi.org/10.3390/cryst15030243
Estado	Published - mar 3 2025

ASJC Scopus Subject Areas

General Chemical Engineering
General Materials Science
Condensed Matter Physics
Inorganic Chemistry

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