Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As

T. M. Pekarek; B. C. Crooker; S. Li; M. McElfresh; J. C. P. Chang; D. McInturff; E. S. Harmon; M. R. Melloch; J. M. Woodall

doi:10.1063/1.364861

Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As

T. M. Pekarek, B. C. Crooker, S. Li, M. McElfresh, J. C. P. Chang, D. McInturff, E. S. Harmon, M. R. Melloch, J. M. Woodall

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Resumen

We have obtained magnetoresistance data on low iron-concentration samples (∼1%) showing a large negative magnetoresistance (3.2% at 5 K in 0.5 T) attributed to imbedded superparamagnetic clusters in In0.53Ga0.47As. The samples were prepared by ion implanting a p-In0.53Ga0.47As layer with iron followed by a rapid thermal anneal. Magnetic measurements confirm the formation of a cluster size distribution with a mean diameter of 6.2 nm and effective moment of 7000 bohr magnetons. The magnetization of these single domain ferromagnets is 50% saturated in a field of only 0.2 T even at room temperature which is important for device applications.

Idioma original	American English
Publicación	Journal of Applied Physics
Volumen	81
DOI	https://doi.org/10.1063/1.364861
Estado	Published - abr 15 1997
Publicado de forma externa	Sí

Disciplines

Atomic, Molecular and Optical Physics
Physics
Quantum Physics

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title = "Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As",

abstract = "We have obtained magnetoresistance data on low iron-concentration samples (∼1%) showing a large negative magnetoresistance (3.2% at 5 K in 0.5 T) attributed to imbedded superparamagnetic clusters in In0.53Ga0.47As. The samples were prepared by ion implanting a p-In0.53Ga0.47As layer with iron followed by a rapid thermal anneal. Magnetic measurements confirm the formation of a cluster size distribution with a mean diameter of 6.2 nm and effective moment of 7000 bohr magnetons. The magnetization of these single domain ferromagnets is 50% saturated in a field of only 0.2 T even at room temperature which is important for device applications.",

author = "Pekarek, {T. M.} and Crooker, {B. C.} and S. Li and M. McElfresh and Chang, {J. C. P.} and D. McInturff and Harmon, {E. S.} and Melloch, {M. R.} and Woodall, {J. M.}",

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month = apr,

day = "15",

doi = "10.1063/1.364861",

language = "American English",

volume = "81",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As

AU - Pekarek, T. M.

AU - Crooker, B. C.

AU - Li, S.

AU - McElfresh, M.

AU - Chang, J. C. P.

AU - McInturff, D.

AU - Harmon, E. S.

AU - Melloch, M. R.

AU - Woodall, J. M.

PY - 1997/4/15

Y1 - 1997/4/15

N2 - We have obtained magnetoresistance data on low iron-concentration samples (∼1%) showing a large negative magnetoresistance (3.2% at 5 K in 0.5 T) attributed to imbedded superparamagnetic clusters in In0.53Ga0.47As. The samples were prepared by ion implanting a p-In0.53Ga0.47As layer with iron followed by a rapid thermal anneal. Magnetic measurements confirm the formation of a cluster size distribution with a mean diameter of 6.2 nm and effective moment of 7000 bohr magnetons. The magnetization of these single domain ferromagnets is 50% saturated in a field of only 0.2 T even at room temperature which is important for device applications.

AB - We have obtained magnetoresistance data on low iron-concentration samples (∼1%) showing a large negative magnetoresistance (3.2% at 5 K in 0.5 T) attributed to imbedded superparamagnetic clusters in In0.53Ga0.47As. The samples were prepared by ion implanting a p-In0.53Ga0.47As layer with iron followed by a rapid thermal anneal. Magnetic measurements confirm the formation of a cluster size distribution with a mean diameter of 6.2 nm and effective moment of 7000 bohr magnetons. The magnetization of these single domain ferromagnets is 50% saturated in a field of only 0.2 T even at room temperature which is important for device applications.

UR - http://aip.scitation.org/doi/full/10.1063/1.364861

U2 - 10.1063/1.364861

DO - 10.1063/1.364861

M3 - Article

SN - 1089-7550

VL - 81

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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