The electrical characterization of molecular-beam-deposited LaA10 3 on gaas and its annealing effects

Donghun Choi; Maitri Warusawithana; Chi On Chui; Joseph Chen; Wilman Tsai; Darrell G. Schlom; James S. Harris

The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects

Donghun Choi
, Maitri Warusawithana
, Chi On Chui
, Joseph Chen
, Wilman Tsai
, Darrell G. Schlom
, James S. Harris

Producción científica: Literary contribution

Idioma original	English
Título de la publicación alojada	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Páginas	127-132
Número de páginas	6
Estado	Published - 2007
Publicado de forma externa	Sí
Evento	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duración: abr 9 2007 → abr 13 2007

Serie de la publicación

Nombre	Materials Research Society Symposium Proceedings
Volumen	996
ISSN (versión impresa)	0272-9172

Conference

Conference	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
País/Territorio	United States
Ciudad	San Francisco, CA
Período	4/9/07 → 4/13/07

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Otros archivos y enlaces

Citar esto

Choi, D., Warusawithana, M., Chui, C. O., Chen, J., Tsai, W., Schlom, D. G., & Harris, J. S. (2007). The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. En Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies (pp. 127-132). (Materials Research Society Symposium Proceedings; Vol. 996).

The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. / Choi, Donghun; Warusawithana, Maitri; Chui, Chi On et al.
Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 127-132 (Materials Research Society Symposium Proceedings; Vol. 996).

Producción científica: Literary contribution

Choi, D, Warusawithana, M, Chui, CO, Chen, J, Tsai, W, Schlom, DG & Harris, JS 2007, The electrical characterization of molecular-beam-deposited LaA10 ₃ on gaas and its annealing effects. En Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 127-132, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 4/9/07.

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